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hardware documentation dual hall-effect sensors with independent outputs hal ? 700, hal ? 740 edition nov. 30, 2009 dsh000029_002en data sheet
HAL700, hal740 data sheet 2 nov. 30, 2009; dsh000029_002en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringements or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this doc- ument and to make changes to the document?s con- tent at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, aviation and aerospace applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applica- tions intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ?hal micronas patents choppered offset compensation protected by micronas patents no. us5260614, us5406202, ep0525235 and ep0548391. third-party trademarks all other brand and product names or company names may be trademarks of their respective companies.
contents page section title micronas nov. 30, 2009; dsh000029_002en 3 data sheet HAL700, hal740 4 1. introduction 4 1.1. features 4 1.2. family overview 5 1.3. marking code 5 1.4. operating junction temperature range 5 1.5. hall sensor package codes 5 1.6. solderability and welding 5 1.7. pin connections 6 2. functional description 9 3. specifications 9 3.1. outline dimensions 10 3.2. dimensions of sensitive area 10 3.3. positions of sensitive areas 10 3.4. absolute maximum ratings 10 3.4.1. storage and shelf life 11 3.5. recommended operating conditions 12 3.6. characteristics 16 4. type description 16 4.1. HAL700 18 4.2. hal740 20 5. application notes 20 5.1. ambient temperature 20 5.2. extended operating conditions 20 5.3. start-up behavior 20 5.4. emc and esd 22 6. data sheet history
HAL700, hal740 data sheet 4 nov. 30, 2009; dsh000029_002en micronas dual hall-effect sensors with independent outputs release note: revision bars indicate significant changes to the previous edition. 1. introduction the HAL700 and the hal740 are monolithic cmos hall-effect sensors consisting of two independent switches controlling two independent open-drain out- puts. the hall plates of the two switches are spaced 2.35 mm apart. the devices include temperature compensation and active offset compensation. these features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. the sensors are designed for industrial and automo- tive applications and operate with supply voltages from 3.8 v to 24 v in the ambient temperature range from ? 40 c up to 125 c. the HAL700 and the hal740 are available in the smd-package sot89b-2. 1.1. features ? two independent hall-switches ? distance of hall plates: 2.35 mm ? switching offset compensation at typically 150 khz ? operation from 3.8 v to 24 v supply voltage ? operation with static and dynamic magnetic fields up to 10 khz ? overvoltage protection at all pins ? reverse-voltage protection at v dd -pin ? robustness of magnetic characteristics against mechanical stress ? short-circuit protected open-drain outputs by thermal shut down ? constant switching points over a wide supply voltage range ? emc corresponding to iso 7637 1.2. family overview the types differ according to the switching behavior of the magnetic switching points at the both hall plates s1 and s2. latching sensors: the output turns low with the magnetic south pole on the branded side of the package. the output maintains its previous state if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. unipolar sensors: in case of a south-sensitive switch, the output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. the switch does not respond to the magnetic north pole on the branded side. in case of a north-sensitive switch, the output turns low with the magnetic north pole on the branded side of the package and turns high if the magnetic field is removed. the switch does not respond to the mag- netic south pole on the branded side. type switching behavior see page HAL700 s1: latching s2: latching 16 hal740 s1: unipolar north sensitive s2: unipolar south sensitive 18
data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 5 1.3. marking code all hall sensors have a marking on the package sur- face (branded side). this marking includes the name of the sensor and the temperature range. 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). k: t j = ? 40 c to +140 c e: t j = ? 40 c to +100 c note: due to power dissipation, there is a difference between the ambient temperature (t a ) and junc- tion temperature. please refer to section 5.1. on page 20 for details. 1.5. hall sensor package codes hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ?hall sensors: ordering codes, packaging, handling?. 1.6. solderability and welding soldering during soldering reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. welding device terminals should be compatible with laser and resistance welding. please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. a very close control of the welding parameters is absolutely necessary in order to reach satisfying results. micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. pin connections fig. 1?1: pin configuration type temperature range k e HAL700 700k 700e hal740 740k 740e halxxxpa-t temperature range: k or e package: sf for sot89b-2 type: 700 example: HAL700sf-k type: 700 package: sot89b-2 temperature range: t j = ? 40 c to +140 c 1 v dd 4gnd 3 s1-output 2 s2-output
HAL700, hal740 data sheet 6 nov. 30, 2009; dsh000029_002en micronas 2. functional description the HAL700 and the hal740 are monolithic inte- grated circuits with two independent subblocks each consisting of a hall plate and the corresponding com- parator. each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. if a magnetic field with flux lines perpendicular to the sen- sitive area is present, the biased hall plate generates a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the com- parator. the subblocks are designed to have closely matched switching points. the output of comparator 1 attached to s1 controls the open drain output at pin 3. pin 2 is set according to the state of comparator 2 con- nected to s2. the temperature-dependent bias ? common to both subblocks ? increases the supply voltage of the hall plates and adjusts the switching points to the decreas- ing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the com- parator switches to the appropriate state. the built-in hysteresis prevents oscillations of the outputs. the magnetic offset caused by mechanical stress is compensated for by use of ?switching offset compen- sation techniques?. therefore, an internal oscillator provides a two-phase clock to both subblocks. for each subblock, the hall voltage is sampled at the end of the first phase. at the end of the second phase, both sampled and actual hall voltages are averaged and compared with the actual switching point. shunt protection devices clamp voltage peaks at the output pins and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to ? 15 v. fig. 2?2 and fig. 2?3 on page 7 show how the output signals are generated by the HAL700 and the hal740. the magnetic flux density at the locations of the two hall plates is shown by the two sinusodial curves at the top of each diagram. the magnetic switching points are depicted as dashed lines for each hall plate separately. fig. 2?1: HAL700 timing diagram with respect to the clock phase t clock t bs1 t bs2 t pin 2 t pin 3 t i dd bs1 on bs2 on v oh v ol v oh v ol 1/f osc t f t f
data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 7 fig. 2?2: HAL700 timing diagram fig. 2?3: hal740 timing diagram time bon,s1 boff,s1 boff,s2 bon,s2 s1 output pin 3 s2 output pin 2 HAL700 0 time boff,s1 bon,s1 boff,s2 bon,s2 s1 outpu t pin 3 s2 outpu t pin 2 hal740 0
HAL700, hal740 data sheet 8 nov. 30, 2009; dsh000029_002en micronas fig. 2?4: HAL700 and hal740 block diagram reverse voltage and overvoltage protection temperature dependent bias hysteresis control hall plate 1 switch comparator gnd 4 1 v dd hall plate 2 switch comparator clock output 3 s1-output output 2 s2-output short circuit and overvoltage protection s1 s2
data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 9 3. specifications 3.1. outline dimensions fig. 3?1: sot89b-2 : plastic s mall o utline t ransistor package, 4 leads, with two sensitive areas weight approximately 0.034 g
HAL700, hal740 data sheet 10 nov. 30, 2009; dsh000029_002en micronas 3.2. dimensions of sensitive area 0.25 mm 0.12 mm 3.3. positions of sensitive areas 3.4. absolute maximum ratings stresses beyond those listed in the ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these conditions is not implied. exposure to absolute maximum rating conditions for extended periods will affect device reliability. this device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this high-impedance circuit. all voltages listed are referenced to ground (gnd). 3.4.1. storage and shelf life the permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 c and a maximum of 85% relative humidity. at these conditions, no dry pack is required. solderability is guaranteed for one year from the date code on the package. sot89b-2 x 1 + x 2 (2.35 0.001) mm x 1 = x 2 1.175 mm nominal y 0.975 mm nominal symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v v o output voltage 2, 3 ? 0.3 28 1) v i o continuous output current 2, 3 ? 20 1) ma t j junction temperature range ? 40 170 c 1) as long as t jmax is not exceeded
data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 11 3.5. recommended operating conditions functional operation of the device beyond those indicated in the ?recommended operating conditions? of this speci- fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. all voltages listed are referenced to ground (gnd). symbol parameter pin no. min. typ. max. unit v dd supply voltage 1 3.8 ? 24 v i o continuous output current 3 0 ? 10 ma v o output voltage (output switch off) 30 ? 24 v
HAL700, hal740 data sheet 12 nov. 30, 2009; dsh000029_002en micronas 3.6. characteristics at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, gnd = 0 v. at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 5 v. fig. 3?2: recommended pad size sot89b-2 dimensions in mm symbol parameter pin no. min. typ. max. unit test conditions i dd supply current 1 3 5.5 9 ma t j = 25 c i dd supply current over temperature range 1 2710ma v ddz overvoltage protection at supply 1 ? 28.5 32 v i dd = 25 ma, t j = 25 c, t = 2 ms v oz overvoltage protection at output 2, 3 ? 28 32 v i o = 20 ma, t j = 25 c, t = 15 ms v ol output voltage 2, 3 ? 130 280 mv i ol = 10 ma, t j = 25 c v ol output voltage over temperature range 2, 3 ? 130 400 mv i ol = 10 ma i oh output leakage current 2, 3 ? 0.06 0.1 a output switched off, t j = 25 c, v oh = 3.8 v to 24 v i oh output leakage current over temperature range 2, 3 ??10 a output switched off, t j 140 c, v oh = 3.8 v to 24 v f osc internal sampling frequency over temperature range ? 100 150 ? khz t en (o) enable time of output after setting of v dd 1 ? 50 ? sv dd = 12 v, b>b on + 2 mt or b data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 13 ?15 ?10 ?5 0 5 10 15 20 25 ?15?10 ?5 0 5 10 15 20 25 30 35 v ma v dd i dd t a = ?40 c t a = 25 c t a =140 c hal 7xx fig. 3?3: typical supply current versus supply voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 12345678 v ma v dd i dd t a = ?40 c t a = 25 c t a = 140 c t a = 100 c hal 7xx fig. 3?4: typical supply current versus supply voltage 2 3 4 5 6 ?50 0 50 100 150 c ma t a i dd v dd = 3.8 v v dd = 12 v v dd = 24 v hal 7xx fig. 3?5: typical supply current versus ambient temperature 140 150 160 170 180 190 ?50 0 50 100 150 200 c khz t a f osc v dd = 3.8 v v dd = 4.5 v...24 v hal 7xx fig. 3?6: typ. internal chopper frequency versus ambient temperature
HAL700, hal740 data sheet 14 nov. 30, 2009; dsh000029_002en micronas 120 140 160 180 200 220 240 0 5 10 15 20 25 30 v khz v dd f osc t a = ?40 c t a = 25 c t a = 140 c hal 7xx fig. 3?7: typ. internal chopper frequency versus supply voltage 120 140 160 180 200 220 240 3 3.5 4.0 4.5 5.0 5.5 6.0 v khz v dd f osc t a = ?40 c t a = 25 c t a = 140 c hal 7xx fig. 3?8: typ. internal chopper frequency versus supply voltage 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol t a = ?40 c t a = 25 c t a = 140 c i o = 10 ma t a = 100 c hal 7xx fig. 3?9: typical output low voltage versus supply voltage 0 100 200 300 400 3 3.5 4.0 4.5 5.0 5.5 6.0 v mv v dd v ol t a = ?40 c t a = 25 c t a = 140 c i o = 10 ma t a =100 c hal 7xx fig. 3?10: typical output low voltage versus supply voltage
data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 15 0 50 100 150 200 250 300 ?50 0 50 100 150 c mv t a v ol v dd = 24 v v dd = 3.8 v v dd = 4.5 v hal 7xx i o = 10 ma fig. 3?11: typ. output low voltage versus ambient temperature 15 20 25 30 35 v a v oh i oh t a = 140 c t a = 100 c t a = 25 c 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 hal 7xx fig. 3?12: typical output leakage current versus output voltage ?50 0 50 100 150 200 c a t a i oh v oh = 24 v 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 hal 7xx v oh = 3.8 v fig. 3?13: typical output leakage current versus ambient temperature
HAL700 data sheet 16 nov. 30, 2009; dsh000029_002en micronas 4. type description 4.1. HAL700 the HAL700 consists of two independent latched switches (see fig. 4?1) with closely matched magnetic characteristics controlling two independent open-drain outputs. the hall plates of the two switches are spaced 2.35 mm apart. in combination with an active target providing a sequence of alternating magnetic north and south poles, the sensor forms a system generating the sig- nals required to control position, speed, and direction of the target movement. magnetic features ? two independent hall-switches ? distance of hall plates: 2.35 mm ?typical b on : 14.9 mt at room temperature ?typical b off : ? 14.9 mt at room temperature ? temperature coefficient of ? 2000 ppm/k in all mag- netic characteristics ? operation with static magnetic fields and dynamic magnetic fields up to 10 khz fig. 4?1: definition of magnetic switching points for the HAL700 positive flux density values refer to magnetic south pole at the branded side of the package. applications the HAL700 is the ideal sensors for position-control applications with direction detection and alternating magnetic signals such as: ? multipole magnet applications, ? rotating speed and direction measurement, position tracking (active targets), and ? window lifters. magnetic thresholds (quasistationary: db/dt<0.5 mt/ms) at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified typical characteristics for t j = 25 c and v dd = 5 v matching b s1 and b s2 (quasistationary: db/dt<0.5 mt/ms) at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified typical characteristics for t j = 25 c and v dd = 5 v hysteresis matching (quasistationary: db/dt<0.5 mt/ms) at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified typical characteristics for t j = 25 c and v dd = 5 v b off b on 0 v ol v o output voltage b b hys para- meter on-point b s1on, b s2on off-point b s1off, , b s2off unit t j min. typ. max. min. typ. max. ? 40 c 12.5 16.3 20 ? 20 ? 16.3 ? 12.5 mt 25 c 10.7 14.9 19.1 ? 19.1 ? 14.9 ? 10.7 mt 100 c 7.7 12.5 17.3 ? 17.3 ? 12.5 ? 7.7 mt 140 c 6.0 10.9 16.0 ? 16.0 ? 10.9 ? 6.0 mt para- meter b s1on ? b s2on b s1off ? b s2off unit t j min. typ max. min. typ max. ? 40 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt 25 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt 100 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt 140 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt parameter (b s1on ? b s1off ) / (b s2on ? b s2off ) unit t j min. typ. max. ? 40 c 0.85 1.0 1.2 ? 25 c 0.85 1.0 1.2 ? 100 c 0.85 1.0 1.2 ? 140 c 0.85 1.0 1.2 ?
data sheet HAL700 micronas nov. 30, 2009; dsh000029_002en 17 ?20 ?15 ?10 ?5 0 5 10 15 20 0 5 10 15 20 25 30 v mt v dd b on b off t a = ?40 c t a = 25 c t a = 140 c t a =100 c hal 700 b on b off fig. 4?2: magnetic switching points versus supply voltage ?20 ?15 ?10 ?5 0 5 10 15 20 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 700 b on b off t a = ?40 c t a = 25 c t a = 140 c t a = 100 c fig. 4?3: magnetic switching points versus supply voltage ?25 ?20 ?15 ?10 ?5 0 5 10 15 20 25 ? 50 0 50 100 150 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min hal 700 v dd = 3.8 v v dd = 4.5 v... 24 v fig. 4?4: magnetic switching points versus ambient temperature
hal740 data sheet 18 nov. 30, 2009; dsh000029_002en micronas 4.2. hal740 the hal740 consists of two independent unipolar switches (see fig. 4?5) with complementary magnetic characteristics controlling two independent open-drain outputs. the hall plates of the two switches are spaced 2.35 mm apart. the s1-output turns low with the magnetic north pole on the branded side of the package and turns high if the magnetic field is removed. it does not respond to the magnetic south pole on the branded side. the s2-output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. it does not respond to the magnetic south pole on the branded side. magnetic features ? two independent hall-switches ? distance of hall plates: 2.35 mm ? temperature coefficient of ? 2000 ppm/k in all mag- netic characteristics ? operation with static magnetic fields and dynamic magnetic fields up to 10 khz applications the hal740 is the ideal sensor for applications which require both magnetic polarities, such as: ? position and direction detection, or ? position and end point detection with either mag- netic pole (omnipolar switch). fig. 4?5: definition of magnetic switching points for the hal740 magnetic characteristics (quasistationary: db/dt < 0.5 t/ms) at t j = ? 40 c to +100 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v. absolute values common to both hall switches. the hall switches s1 and s2 only differ in sign. for s1 the sign is negative, for s2 positive. positive flux density values refer to the magnetic south pole at the branded side of the package. the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 b off,s2 b on,s2 0 v ol v o output voltage b b hys b hys b off,s1 b on,s1 parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 8.5 12.3 16.0 5.0 8.8 12.5 2.0 ? 5.5 ? 10.6 ? mt 25 c 7.0 11.5 16.0 3.5 8.0 12.5 2.0 ? 6.0 ? 9.8 ? mt 100 c 5.5 10.8 16.0 2.0 7.0 12.5 1.5 ? 6.5 ? 8.9 ? mt 140 c 4.6 10.4 16.0 1.1 6.8 12.5 1.0 ? 7.0 ? 8.6 ? mt
data sheet hal740 micronas nov. 30, 2009; dsh000029_002en 19 6 8 10 12 14 16 0 5 10 15 20 25 30 v mt v dd b on b off t a = ?40 c t a = 25 c t a = 140 c t a =100 c hal 740 b on b off fig. 4?6: magnetic switching points versus supply voltage 6 8 10 12 14 16 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 740 b on b off t a = ?40 c t a = 25 c t a = 140 c t a = 100 c fig. 4?7: magnetic switching points versus supply voltage 0 5 10 15 20 ?50 0 50 100 150 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min hal 740 v dd = 3.8 v v dd = 4.5 v... 24 v fig. 4?8: magnetic switching points versus ambient temperature
HAL700, hal740 data sheet 20 nov. 30, 2009; dsh000029_002en micronas 5. application notes 5.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). t j = t a + t at static conditions and continuous operation, the fol- lowing equation applies: t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the appli- cation. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax ? t 5.2. extended operating conditions all sensors fulfill the electrical and magnetic character- istics when operated within the recommended oper- ating conditions (see section 3.5. on page 11). supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v is not tested. for special test conditions, please con- tact micronas. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the ?characteristics? (see section 3.6. on page 12). during the initialization time, the output states are not defined and the outputs can toggle. after t en(o) , both outputs will be either high or low for a stable magnetic field (no toggling). the outputs will be low if the applied magnetic flux density b exceeds b on and high if b drops below b off . for magnetic fields between b off and b on , the output states of the hall sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic flux density must be above b onmax , respectively, below b offmin . 5.4. emc and esd for applications that cause disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 5?1). the series resistor and the capacitor should be placed as closely as possible to the hall sensor. please contact micronas for detailed investigation reports with emc and esd results. fig. 5?1: test circuit for emc investigations 1 v dd 4gnd 3 s1-output 2 s2-output r v 220 v emc v p 4.7 nf r l 2.4 k 20 pf r l 2.4 k 20 pf
data sheet HAL700, hal740 micronas nov. 30, 2009; dsh000029_002en 21

HAL700, hal740 data sheet 22 nov. 30, 2009; dsh000029_002en micronas micronas gmbh hans-bunte-strasse 19 ? d-79108 freiburg ? p.o. box 840 ? d-79008 freiburg, germany tel. +49-761-517-0 ? fax +49-761-517-2174 ? e-mail: docservice@micronas.com ? internet: www.micronas.com 6. data sheet history 1. : ?HAL700, hal740 dual hall-effect sensors with independent outputs?, june 13, 2002, 6251-477- 1ds. first release of the data sheet. 2. data sheet: ?HAL700, hal740 dual hall-effect sensors with independent outputs?, sept. 13, 2004, 6251-477-2ds. second release of the data sheet. major changes: ? new package diagram for sot89b-2 3. data sheet: ?HAL700, hal740 dual hall-effect sensors with independent outputs?, nov. 30, 2009, dsh000029_002en. third release of the data sheet. major changes: ? section 1.6. ?solderability and welding? updated ? section 2?3 hal740 timing diagram ? section 3.1. package diagram updated ? section 3.6. recommended footprint sot89b added

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